Detailed Product Description

Purity    6N   
Size 125*125±0.5mm   
Diagonal  150mm   
Growth Method         CZ   
Conductivity Type P Type(Boron Doped)   
Resistivity 0.5∼6ohm/cm(mostly0.5∼3ohm/cm)   
Orientation  <100>±3°   
Etch Pit Density ≤3*10E pits/cm2   
Oxygen Content ≤1*10E18atm/cm3(or≤20ppma)    
Carbon Content ≤5*10E16atm/cm3(or≤1ppma)    
Life Time ≥10usec   
Center Thickness 200±20um   
Angle between Square Sides 90°±18'   
Difference between the length of the chords 1mm   
TTV ≤30um   
Bow ≤70um   
Saw Mark ≤30um   
Edge Defects ≤0.5(D)*1(L)mm   
Wafer Surface Both sides of wafer as cut and cleaned,free form slurry,oil and epoxy etc.